Field Effect Transistor RF Amplifier Design Techniques Application Note
ثبت نشده
چکیده
The two port network method has been employed in the case of bipolar transistor high frequency amplifier design with excellent results.1, 2, 3, 4, 5 Gain, device terminal admittances, and stability are all exact computations free of approximations. Fortunately, the theory and design equations currently being used for bipolar amplifiers are fully applicable to FET’s. This is due to one of the main advantages of the method — it is based on the characterization of the active device as a linear active two port network. A FET may be characterized in this manner just as conveniently as a bipolar transistor.
منابع مشابه
RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays
Introduction This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise amplifier and a 10MHz to 600MHz wideband feedback amplifier are described. The HFA3046, HFA3096, HFA3127, HFA3128 transistor arrays are fabricated in a ...
متن کاملAN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages
The purpose of this application note is to provide Freescale Semiconductor customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in over-molded plastic (OMP) packages. This document will aid customers in developing an assembly process suitable for their design as well as their manufacturing operation. Each Power Amplifier (PA) design has its ...
متن کاملA Novel Design of Low Voltage,Wilson Current Mirror based Wideband Operational Transconductance Amplifier
An optimum OTA topology is done in order to optimize MOS transistor sizing.Also, the design of folded cascode OTA, which works for frequencies that lead to a base band circuit design for RF application, is based on transistor sizing methodology. Simulation results are performed using SPICE software and BSIM3V3 model for CMOS 0.18μm process, show that the designed folded cascode OTA has a 52dB D...
متن کاملA Thesis for the Degree of Master Design of 2~2.5 GHz Variable Gain LNA and 2.4 GHz Low Power Folded RF Front- End
Currently, there are two demands in RF front-end design such as multi-standard application and low power consumption. However, it is difficult to satisfy these demands simultaneously. Therefore, two design techniques are explained in this paper, respectively. In this paper, two RF circuits, a variable gain LNA and low power folded RF frontend, are designed. At first, a variable gain LNA (VG-LNA...
متن کاملAN3789 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
This application note provides Freescale Semiconductor customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. Each PA design has its own unique characteristics. Similarly, each manufacturing operation also has its own process capabilities and variations....
متن کامل